BSC042NE7NS3 G

Mfr. #:: BSC042NE7NS3 G
メーカー:: Infineon Technologies
説明:: Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G)
ライフサイクル:: メーカー新製品
データシート:: BSC042NE7NS3 G データシート
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詳しくは:: BSC042NE7NS3 G 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: BSC042NE7NS3GATMA1 BSC042NE7NS3GXT SP000657440

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TDSON-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 125 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 9 ns

立ち上がり時間: 17 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 100 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 75 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.1 V

Rds-On-Drain-Source-Resistance: 4.2 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 34 ns

典型的なターンオン遅延時間: 14 ns

Qg-Gate-Charge: 52 nC

フォワード-相互コンダクタンス-最小: 89 S 44 S

Tags: BSC042NE7NS3G, BSC042NE, BSC042, BSC04, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC042NE7NS3 G 詳しくは

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

モデル	メーカー	説明	ストック	価格
BSC042NE7NS3GATMA1 DISTI # V72:2272_06383128	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	927	500:$1.2890 250:$1.4496 100:$1.4650 25:$1.7711 10:$1.7914 1:$2.0551
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4703In Stock	1000:$1.3445 500:$1.6227 100:$2.0863 10:$2.5960 1:$2.8700
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4703In Stock	1000:$1.3445 500:$1.6227 100:$2.0863 10:$2.5960 1:$2.8700
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 75V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.1703
BSC042NE7NS3GATMA1 DISTI # 31038113	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$1.1424
BSC042NE7NS3G DISTI # 30579779	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP RoHS: Compliant	3922	23:$1.0570
BSC042NE7NS3GATMA1 DISTI # 26195121	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	927	500:$1.2890 250:$1.4496 100:$1.4650 25:$1.7711 10:$1.7914 6:$2.0551
BSC042NE7NS3 G DISTI # BSC042NE7NS3 G	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 15000
BSC042NE7NS3GATMA1 DISTI # BSC042NE7NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A TDSON-8 T/R - Tape and Reel (Alt: BSC042NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.1789 10000:$1.1359 20000:$1.0949 30000:$1.0579 50000:$1.0389
BSC042NE7NS3GATMA1 DISTI # 79X1331	Infineon Technologies AG	MOSFET, N-CH, 75V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes	4835	1:$2.4100 10:$2.0500 25:$1.9100 50:$1.7800 100:$1.6400 250:$1.5400 500:$1.4400 1000:$1.1900
BSC042NE7NS3 G DISTI # 726-BSC042NE7NS3GXT	Infineon Technologies AG	MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	6496	1:$2.4100 10:$2.0500 100:$1.6400 500:$1.4400 1000:$1.1900
BSC042NE7NS3GATMA1 DISTI # 726-BSC042NE7NS3GATM	Infineon Technologies AG	MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4940	1:$2.4100 10:$2.0500 100:$1.6400 500:$1.4400 1000:$1.1900
BSC042NE7NS3GATMA1	Infineon Technologies AG	Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	5000Reel	5000:$1.2600
BSC042NE7NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	100	1000:$0.9900 500:$1.0400 100:$1.0800 25:$1.1300 1:$1.2200
BSC042NE7NS3 G	Infineon Technologies AG	RoHS: Not Compliant	4938	1000:$0.9900 500:$1.0400 100:$1.0800 25:$1.1300 1:$1.2200
BSC042NE7NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	8672	1000:$0.9900 500:$1.0400 100:$1.0800 25:$1.1300 1:$1.2200
BSC042NE7NS3GATMA1 DISTI # 9064334P	Infineon Technologies AG	MOSFET N-CHANNEL 75V 19A 8-PIN TDSON EP, RL	1780	100:£1.1270 500:£0.9530 1000:£0.8170 2500:£0.7870
BSC042NE7NS3G	Infineon Technologies AG	19 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET	36	12:$1.8000 3:$2.2500 1:$2.7000
BSC042NE7NS3G	Infineon Technologies AG		120
BSC042NE7NS3GATMA1 DISTI # 2432706	Infineon Technologies AG	MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant	4835	1:£1.7000 10:£1.4300 100:£1.1300 250:£1.0300 500:£0.9310
BSC042NE7NS3GATMA1 DISTI # 2432706RL	Infineon Technologies AG	MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.8200 10:$3.2500 100:$2.6000 500:$2.2800 1000:$1.8800 2500:$1.7600 5000:$1.7000
BSC042NE7NS3GATMA1 DISTI # 2432706	Infineon Technologies AG	MOSFET, N CH, 75V, 100A, TDSON-8 RoHS: Compliant	4835	1:$3.8200 10:$3.2500 100:$2.6000 500:$2.2800 1000:$1.8800 2500:$1.7600 5000:$1.7000
BSC042NE7NS3 G DISTI # C1S322000296077	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP T/R RoHS: Compliant	3922	10:$0.8290 5:$0.8880
BSC042NE7NS3GATMA1 DISTI # C1S322000598841	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	927	250:$1.4503 100:$1.5021 25:$1.7999 10:$1.8058 1:$2.0552
BSC042NE7NS3GATMA1 DISTI # C1S322000255265	Infineon Technologies AG	Trans MOSFET N-CH 75V 19A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$1.1400

画像	モデル	説明
	Mfr.#: BSC042NE7NS3 G OMO.#: OMO-BSC042NE7NS3-G	MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC042NE7NS3GATMA1 OMO.#: OMO-BSC042NE7NS3GATMA1	MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC042N03MS G OMO.#: OMO-BSC042N03MS-G	MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M
	Mfr.#: BSC042N03LS OMO.#: OMO-BSC042N03LS-1190	ブランドニューオリジナル
	Mfr.#: BSC042N03MS OMO.#: OMO-BSC042N03MS-1190	ブランドニューオリジナル
	Mfr.#: BSC042N03MS G OMO.#: OMO-BSC042N03MS-G-1190	Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP
	Mfr.#: BSC042N03MSG OMO.#: OMO-BSC042N03MSG-1190	ブランドニューオリジナル
	Mfr.#: BSC042N03S G OMO.#: OMO-BSC042N03S-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 95A TDSON-8
	Mfr.#: BSC042NE7NS3G OMO.#: OMO-BSC042NE7NS3G-1190	Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP
	Mfr.#: BSC042N03ST OMO.#: OMO-BSC042N03ST-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 50A TDSON-8

BSC042NE7NS3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes