SSM3J14TTE85LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSM-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

2.7 A

Rds On - Drain-Source Resistance:

120 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Pd - Power Dissipation:

700 mW

Configuration:

Single

Packaging:

Reel

Height:

0.7 mm

Length:

2.9 mm

Series:

SSM3J14

Transistor Type:

1 P-Channel

Width:

1.6 mm

Brand:

Toshiba

Product Type:

MOSFET

Factory Pack Quantity:

8000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

29 ns

Typical Turn-On Delay Time:

29 ns

Tags

SSM3J14T, SSM3J14, SSM3J1, SSM3J, SSM3, SSM