BSC750N10ND G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TDSON-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

62 mOhms, 62 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

11 nC, 11 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

26 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

1.27 mm

Length:

5.9 mm

Product:

MOSFET Small Signal

Series:

OptiMOS 2

Transistor Type:

2 N-Channel

Width:

5.15 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

6.5 S, 6.5 S

Fall Time:

3 ns, 3 ns

Product Type:

MOSFET

Rise Time:

4 ns, 4 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns, 13 ns

Typical Turn-On Delay Time:

9 ns, 9 ns

Part # Aliases:

BSC750N10NDGATMA1 BSC75N1NDGXT SP000359610

Unit Weight:

0.003527 oz

Tags

BSC750N10NDG, BSC750N10ND, BSC75, BSC7, BSC