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| PartNumber | BSC750N10NDGATMA1 | BSC750N10NDG |
| Description | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 100V,13A,Dual N-Ch Power MOSFET |
| Manufacturer | Infineon | INFINEON |
| Product Category | MOSFET | FETs - Arrays |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TDSON-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 13 A | - |
| Rds On Drain Source Resistance | 62 mOhms, 62 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 11 nC, 11 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 26 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.27 mm | - |
| Length | 5.9 mm | - |
| Series | OptiMOS 2 | - |
| Transistor Type | 2 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 6.5 S, 6.5 S | - |
| Fall Time | 3 ns, 3 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 4 ns, 4 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns, 13 ns | - |
| Typical Turn On Delay Time | 9 ns, 9 ns | - |
| Part # Aliases | BSC750N10ND BSC75N1NDGXT G SP000359610 | - |
| Unit Weight | 0.019612 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC750N10NDGATMA1 | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | |
| BSC750N10NDGATMA1 | MOSFET 2N-CH 100V 3.2A 8TDSON | ||
| BSC750N10NDG | 100V,13A,Dual N-Ch Power MOSFET |