BSS138W H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-323-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

280 mA

Rds On - Drain-Source Resistance:

3.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

600 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Product:

MOSFET Small Signal

Transistor Type:

1 N-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

0.12 S

Fall Time:

8.2 ns

Product Type:

MOSFET

Rise Time:

3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.7 ns

Typical Turn-On Delay Time:

2.2 ns

Part # Aliases:

BSS138WH6327XT BSS138WH6327XTSA1 SP000924068

Unit Weight:

0.000176 oz

Tags

BSS138WH63, BSS138WH6, BSS138WH, BSS138W, BSS138, BSS13, BSS1, BSS