STP1N105K3

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.05 kV

Id - Continuous Drain Current:

1.4 A

Rds On - Drain-Source Resistance:

11 Ohms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Qg - Gate Charge:

13 nC

Pd - Power Dissipation:

60 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

SuperMESH

Packaging:

Tube

Series:

STP1N105K3

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27 ns

Typical Turn-On Delay Time:

6 ns

Unit Weight:

0.011640 oz

Tags

STP1, STP