IXTH50N30

Mfr. #:: IXTH50N30
メーカー:: IXYS
説明:: MOSFET 59 Amps 300V 0.065 Rds
ライフサイクル:: メーカー新製品
データシート:: IXTH50N30 データシート
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ECAD Model:

製品属性
属性値

メーカー: IXYS

製品カテゴリ: FET-シングル

シリーズ: IXTH50N30

包装: チューブ

単位重量: 0.229281 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 400 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 17 ns

立ち上がり時間: 33 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 50 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 300 V

Rds-On-Drain-Source-Resistance: 65 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 70 ns

典型的なターンオン遅延時間: 24 ns

チャネルモード: 強化

Tags: IXTH50N, IXTH50, IXTH5, IXTH, IXT

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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IXTH50N30 説明

***ical: Trans MOSFET N-CH 300V 50A 3-Pin(3+Tab) TO-247

***icroelectronics: N-channel 300 V, 0.037 Ohm, 60 A low gate charge STripFET Power MOSFET in TO-247 package

***ical: Trans MOSFET N-CH 300V 60A Automotive 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: N-Channel 300 V 37 mOhm Flange Mount STripFET Power Mosfet - TO-247

***r Electronics: Power Field-Effect Transistor, 60A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***nell: MOSFET, N CH, 300V, 60A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 320W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 60A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 300V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247

***nell: MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***icroelectronics: N-Channel 500V - 0.045 Ohm - 60A Max247(TM) Zener-Protected MDmesh(TM) Power MOSFET

***th Star Micro: Transistor MOSFET N-CH 500V 60A 3-Pin (3+Tab) Max247 Tube

***ure Electronics: N-Channel 500 V 50 mOhm Through Hole MDmesh Power Mosfet - MAX-247

***nell: MOSFET, N, MAX-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation

***p One Stop: Trans MOSFET N-CH 650V 63.3A Automotive 3-Pin(3+Tab) TO-247 Tube

***ark: Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:63.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 63.3A I(D), 650V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ineon SCT: 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

***et: Transistor MOSFET N-Channel 600V 53.5A 3-Pin TO-247 Tube

***ure Electronics: N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247

***ark: MOSFET, N-CH, 600V, 53.5A, 150DEG C/391W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:53.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ure Electronics: Single N-Channel 600 V 60 mOhm 68 nC CoolMOS Power Mosfet - TO-247-3

***nell: MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Market price

モデル	メーカー	説明	ストック	価格
IXTH50N30 DISTI # IXTH50N30-ND	IXYS Corporation	MOSFET N-CH 300V 50A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$9.8197

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IXTH50N30

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes