TSM600N25ECH C5G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

250 V

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

500 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

8.4 nC

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

52 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

3750

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

14 ns

Unit Weight:

0.011993 oz

Tags

TSM600, TSM60, TSM6, TSM