IXFX360N15T2

IXFX360N15T2
Mfr. #:
IXFX360N15T2
メーカー:
Littelfuse
説明:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
ライフサイクル:
メーカー新製品
データシート:
IXFX360N15T2 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IXFX360N15T2 詳しくは
製品属性
属性値
メーカー
IXYS
製品カテゴリ
FET-シングル
シリーズ
GigaMOS
製品
MOSFETゲートドライバ
タイプ
GigaMOS Trench T2 HiperFet
包装
チューブ
取り付けスタイル
スルーホール
商標名
HiPerFET
パッケージ-ケース
PLUS-247
作動温度
-55°C ~ 175°C (TJ)
取付タイプ
スルーホール
サプライヤー-デバイス-パッケージ
PLUS247-3
出力数
1
FETタイプ
MOSFET Nチャネル、金属酸化物
パワーマックス
1670W
Drain-to-Source-Voltage-Vdss
150V
入力-静電容量-Ciss-Vds
47500pF @ 25V
FET機能
標準
Current-Continuous-Drain-Id-25°C
360A (Tc)
Rds-On-Max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-Max-Id
5V @ 8mA
ゲートチャージ-Qg-Vgs
715nC @ 10V
Pd-電力損失
1670 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
出力電圧
150 V
動作-供給-電流
100 A
出力電流
360 A
立ち下がり時間
265 ns
立ち上がり時間
170 ns
ドライバーの数
1 Driver
最大ターンオフ遅延時間
115 ns
最大ターンオン遅延時間
50 ns
Tags
IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 150V 360A PLUS247
***ure Electronics
150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
モデル メーカー 説明 ストック 価格
IXFX360N15T2
DISTI # V99:2348_15878492
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
30
  • 500:$12.8800
  • 250:$14.6000
  • 100:$16.8000
  • 50:$17.2300
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # IXFX360N15T2-ND
IXYS CorporationMOSFET N-CH 150V 360A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX360N15T2
DISTI # 30695442
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # 747-IXFX360N15T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
73
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
IXFX360N15T2
DISTI # C1S331700117829
IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
画像 モデル 説明
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T

MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T-IXYS-CORPORATION

MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
可用性
ストック:
Available
注文中:
4000
数量を入力してください:
IXFX360N15T2の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$19.32
$19.32
10
$18.35
$183.54
100
$17.39
$1 738.80
500
$16.42
$8 211.00
1000
$15.46
$15 456.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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