IXTA4N80P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

3.5 A

Rds On - Drain-Source Resistance:

3 Ohms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

100 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

4.5 mm

Length:

9.9 mm

Series:

IXTA4N80

Transistor Type:

1 N-Channel

Width:

9.2 mm

Brand:

IXYS

Fall Time:

29 ns

Product Type:

MOSFET

Rise Time:

24 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

60 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.056438 oz

Tags

IXTA4N, IXTA4, IXTA, IXT