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IPB35N10S3L-26

IPB35N10S3L-26
Mfr. #:
IPB35N10S3L-26
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
Lifecycle:
New from this manufacturer.
Datasheet:
IPB35N10S3L-26 Datasheet
Delivery:
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Payment:
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ECAD Model:
More Information:
IPB35N10S3L-26 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
OptiMOS-T
Packaging
Reel
Part-Aliases
IPB35N10S3L26ATMA1 IPB35N10S3L26XT SP000776044
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
71 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3 ns
Rise-Time
4 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
35 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistance
26.3 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
18 ns
Typical-Turn-On-Delay-Time
6 ns
Qg-Gate-Charge
30 nC
Tags
IPB35N10, IPB35N, IPB35, IPB3, IPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB35N10S3L26ATMA1
DISTI # V72:2272_06384799		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 500:$0.8098
  • 250:$0.8979
  • 100:$0.9339
  • 25:$1.1655
  • 10:$1.2365
  • 1:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.7091
IPB35N10S3L26ATMA1
DISTI # 33079428		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.5674
IPB35N10S3L26ATMA1
DISTI # 26195596		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		858
  • 12:$1.5988
IPB35N10S3L26ATMA1
DISTI # IPB35N10S3L26ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6019
  • 2000:$0.6249
  • 1000:$0.6479
IPB35N10S3L26ATMA1
DISTI # SP000776044		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€0.5919
  • 6000:€0.6319
  • 4000:€0.6949
  • 2000:€0.7779
  • 1000:€0.9969
IPB35N10S3L26ATMA1
DISTI # 34AC1657		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes2039
  • 500:$0.8650
  • 250:$0.9210
  • 100:$0.9780
  • 50:$1.0800
  • 25:$1.1700
  • 10:$1.2700
  • 1:$1.4800
IPB35N10S3L26ATMA1
DISTI # 726-IPB35N10S3L26ATM		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1442
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26
DISTI # 726-IPB35N10S3L-26		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
RoHS: Compliant		1110
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9680
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.5990
  • 10000:$0.5770
IPB35N10S3L-26Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 35A I(D), 100V, 0.0322OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB248
  • 186:$0.7290
  • 70:$0.8100
  • 1:$1.6200
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-263
RoHS: Compliant		2024
  • 100:$1.2800
  • 25:$1.5700
  • 5:$1.8100
IPB35N10S3L26ATMA1
DISTI # 2781070		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-2632039
  • 500:£0.6540
  • 250:£0.6960
  • 100:£0.7380
  • 10:£1.0100
  • 1:£1.2800
Image Part # Description
IPB35N10S3L-26

Mfr.#: IPB35N10S3L-26

OMO.#: OMO-IPB35N10S3L-26

 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1

 MOSFET N-CHANNEL 100+
IPB35N10S3L26ATMA1

Mfr.#: IPB35N10S3L26ATMA1

OMO.#: OMO-IPB35N10S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH TO263-3
IPB35N12S3L26ATMA1

Mfr.#: IPB35N12S3L26ATMA1

OMO.#: OMO-IPB35N12S3L26ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL_100+
IPB35N10S3L-26

Mfr.#: IPB35N10S3L-26

OMO.#: OMO-IPB35N10S3L-26-1190

 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N10S3L-26(3N10L26)

Mfr.#: IPB35N10S3L-26(3N10L26)

OMO.#: OMO-IPB35N10S3L-26-3N10L26--1190

 New and Original
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IPB35N10S3L-26 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.87
$0.87
10
$0.82
$8.22
100
$0.78
$77.90
500
$0.74
$367.85
1000
$0.69
$692.40
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