SSM3K2615TU,LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

UFM-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

300 mOhms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

6 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.6 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

SSM3K2615TU

Brand:

Toshiba

Forward Transconductance - Min:

1 S

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

150 ns

Typical Turn-On Delay Time:

30 ns

Unit Weight:

0.000233 oz

Tags

SSM3K2, SSM3K, SSM3, SSM