STB120N10F4

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

8 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

131 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

STB120N10F4

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

79 ns

Product Type:

MOSFET

Rise Time:

116 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

111 ns

Typical Turn-On Delay Time:

32 ns

Unit Weight:

0.077603 oz

Tags

STB120N, STB120, STB12, STB1, STB