ATF-501P8-TR2

Product Attribute

Attribute Value

Manufacturer:

Broadcom Limited

Product Category:

RF JFET Transistors

RoHS:

Y

Transistor Type:

EpHEMT

Technology:

GaAs

Gain:

15 dB

Vds - Drain-Source Breakdown Voltage:

7 V

Vgs - Gate-Source Breakdown Voltage:

- 5 V to 0.8 V

Id - Continuous Drain Current:

1 A

Maximum Drain Gate Voltage:

- 5 V to + 1 V

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

3.5 W

Mounting Style:

SMD/SMT

Package / Case:

LPCC-8

Packaging:

Reel

Configuration:

Single Dual Source

Operating Frequency:

2 GHz

Product:

RF JFET

Type:

GaAs EpHEMT

Brand:

Broadcom / Avago

Forward Transconductance - Min:

1872 mmho

NF - Noise Figure:

1 dB

P1dB - Compression Point:

29 dBm

Product Type:

RF JFET Transistors

Factory Pack Quantity:

10000

Subcategory:

Transistors

Tags

ATF-501P, ATF-50, ATF-5, ATF