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| PartNumber | ATF-501P8-TR2 | ATF-501P8-BLK | ATF-501P8-TR1 |
| Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | FET RF 7V 2GHZ 8-LPCC |
| Manufacturer | Broadcom Limited | Broadcom Limited | AGILENT |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF FETs |
| RoHS | Y | Y | - |
| Transistor Type | EpHEMT | EpHEMT | EpHEMT |
| Technology | GaAs | GaAs | GaAs |
| Gain | 15 dB | 15 dB | 15 dB |
| Vds Drain Source Breakdown Voltage | 7 V | 7 V | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 0.8 V | - 5 V to 0.8 V | - |
| Id Continuous Drain Current | 1 A | 1 A | - |
| Maximum Drain Gate Voltage | - 5 V to + 1 V | - 5 V to + 1 V | - 5 V to + 1 V |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.5 W | 3.5 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | LPCC-8 | LPCC-8 | - |
| Packaging | Reel | Bulk | Reel |
| Configuration | Single Dual Source | Single Dual Source | Single Dual Source |
| Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
| Product | RF JFET | RF JFET | - |
| Type | GaAs EpHEMT | GaAs EpHEMT | - |
| Brand | Broadcom / Avago | Broadcom / Avago | - |
| Forward Transconductance Min | 1872 mmho | 1872 mmho | - |
| NF Noise Figure | 1 dB | 1 dB | - |
| P1dB Compression Point | 29 dBm | 29 dBm | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 10000 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Package Case | - | - | LPCC-8 |
| Pd Power Dissipation | - | - | 3.5 W |
| Id Continuous Drain Current | - | - | 1 A |
| Vds Drain Source Breakdown Voltage | - | - | 7 V |
| Forward Transconductance Min | - | - | 1872 mmho |
| Vgs Gate Source Breakdown Voltage | - | - | - 5 V to 0.8 V |
| NF Noise Figure | - | - | 1 dB |
| P1dB Compression Point | - | - | 29 dBm |