BSS209PW L6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-323-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

580 mA

Rds On - Drain-Source Resistance:

550 mOhms

Vgs - Gate-Source Voltage:

12 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

520 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Product:

MOSFET Small Signal

Series:

BSS209

Transistor Type:

1 P-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Fall Time:

5.8 ns

Product Type:

MOSFET

Rise Time:

5.8 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7.6 ns

Typical Turn-On Delay Time:

4.4 ns

Part # Aliases:

BSS209PWL6327XT

Unit Weight:

0.000176 oz

Tags

BSS209PWL, BSS209P, BSS209, BSS20, BSS2, BSS