SI4936BDY-T1-E3

Mfr. #:: SI4936BDY-T1-E3
メーカー:: Vishay
説明:: MOSFET 2N-CH 30V 6.9A 8-SOIC
ライフサイクル:: メーカー新製品
データシート:: SI4936BDY-T1-E3 データシート
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詳しくは:: SI4936BDY-T1-E3 詳しくは

製品属性
属性値

Tags: SI4936BDY-T1-E, SI4936BDY-T1, SI4936BDY-T, SI4936B, SI4936, SI493, SI49, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4936BDY-T1-E3 説明

***ied Electronics & Automation: SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor; 5.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R

***C: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC

***Components: MOSFET N-Channel 30V 5.9A SOIC8

***pNet: TRANS MOSFET N-CH 30V 5.9A 8SOIC N

***i-Key: MOSFET 2N-CH 30V 6.9A 8-SOIC

***ponent Sense: DIODE MOSFET N-CH DUAL LF 30V 5.5A SO8

***ser: MOSFETs 30 Volt 6.9 Amp 2.8W

***ronik: N/P-CH 30V 7A 3,5mOhm SO-8

***: DUAL N-CHANNEL 30-V(D-S)

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6900mA; On Resistance, Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:20V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, N, SOIC; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:6.8A; Resistance, Rds On:0.035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Base Number:4936; N-channel Gate Charge:4.5nC; No. of Pins:8; Resistance, Rds on @ Vgs = 10V:0.035ohm; Resistance, Rds on @ Vgs = 4.5V:0.051ohm; Voltage, Vds Max:30V

***ment14 APAC: MOSFET, DUAL, N, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:4936; Current Id Max:6.9A; N-channel Gate Charge:4.5nC; On State Resistance @ Vgs = 4.5V:51mohm; On State resistance @ Vgs = 10V:35mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

SI4936BDY-T1-E3 詳しくは

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI4936BDY-T1-E3 DISTI # V72:2272_09216671	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	230	100:$0.6113 25:$0.7247 10:$0.8857 1:$1.0059
SI4936BDY-T1-E3 DISTI # V36:1790_09216671	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	0	2500:$0.5181
SI4936BDY-T1-E3 DISTI # SI4936BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8618In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4936BDY-T1-E3 DISTI # SI4936BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8618In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4936BDY-T1-E3 DISTI # SI4936BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 6.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	25000:$0.3015 12500:$0.3095 5000:$0.3214 2500:$0.3452
SI4936BDY-T1-E3 DISTI # 32316331	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	10000	2500:$0.4578
SI4936BDY-T1-E3 DISTI # 25790202	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	230	14:$1.0059
SI4936BDY-T1-E3 DISTI # SI4936BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R (Alt: SI4936BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2599 15000:€0.2789 10000:€0.3019 5000:€0.3509 2500:€0.5149
SI4936BDY-T1-E3 DISTI # SI4936BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4869 15000:$0.4999 10000:$0.5139 5000:$0.5359 2500:$0.5529
SI4936BDY-T1-E3 DISTI # 75M5505	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.029ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	500:$0.5620 250:$0.6070 100:$0.6520 50:$0.7180 25:$0.7840 10:$0.8500 1:$1.0300
SI4936BDY-T1-E3 DISTI # 70026235	Vishay Siliconix	SI4936BDY-T1-E3 Dual N-channel MOSFET Transistor,5.9 A,30 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.5900 5000:$0.5680 12500:$0.5580
SI4936BDY-T1-E3/BKN DISTI # 70026362	Vishay Siliconix	DUAL N-CHANNEL 30-V(D-S) MOSFE RoHS: Compliant	0	1:$0.7400 100:$0.7000 250:$0.6600 500:$0.6300 1000:$0.6000
SI4936BDY-T1-E3 DISTI # 781-SI4936BDY-T1-E3	Vishay Intertechnologies	MOSFET 30 Volt 6.9 Amp 2.8W RoHS: Compliant	4357	1:$1.0200 10:$0.8420 100:$0.6460 500:$0.5560
SI4936BDY-T1-E3	Vishay Intertechnologies	Dual N-Channel 30 V 0.035 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	12500Reel	2500:$0.3250
SI4936BDY-T1-E3 DISTI # 1497618	Vishay Intertechnologies	MOSFET, DUAL, N, SOIC RoHS: Compliant	0	1000:$0.5920 500:$0.7390 100:$0.9350 10:$1.2200 1:$1.3900
SI4936BDY-T1-E3	Vishay Intertechnologies	MOSFET 30 Volt 6.9 Amp 2.8W	Americas - 7500	2500:$0.3860 5000:$0.3740 10000:$0.3670 20000:$0.3580
SI4936BDY-T1-E3 DISTI # XSFP00000103647	Vishay Siliconix	RoHS: Compliant	10000 in Stock0 on Order	10000:$0.4333 2500:$0.4643

画像	モデル	説明
	Mfr.#: SI4936BDY-T1-E3 OMO.#: OMO-SI4936BDY-T1-E3	MOSFET 30 Volt 6.9 Amp 2.8W
	Mfr.#: SI4936BDY-T1-GE3 OMO.#: OMO-SI4936BDY-T1-GE3	MOSFET 30V 6.9A 2.8W 35mohm @ 10V
	Mfr.#: SI4936BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4936BDY-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI4936BDY OMO.#: OMO-SI4936BDY-1190	ブランドニューオリジナル
	Mfr.#: SI4936BDY-T1-E3 OMO.#: OMO-SI4936BDY-T1-E3-VISHAY	MOSFET 2N-CH 30V 6.9A 8-SOIC
	Mfr.#: SI4936BDY-T1-E3 GE3 OMO.#: OMO-SI4936BDY-T1-E3-GE3-1190	ブランドニューオリジナル
	Mfr.#: SI4936BDY-T1-GE3 OMO.#: OMO-SI4936BDY-T1-GE3-VISHAY	MOSFET 2N-CH 30V 6.9A 8-SOIC
	Mfr.#: SI4936BDY-TI-E3 OMO.#: OMO-SI4936BDY-TI-E3-1190	ブランドニューオリジナル

SI4936BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes