STP7N52DK3

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

620 V

Id - Continuous Drain Current:

6.2 A

Rds On - Drain-Source Resistance:

1.15 Ohms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

34 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

90 W

Configuration:

Single

Packaging:

Tube

Series:

STP7N52DK3

Transistor Type:

1 N-Channel

Type:

N-Channel SuperFREDmesh3 Power MOSFET

Brand:

STMicroelectronics

Forward Transconductance - Min:

1.5 S

Fall Time:

4.2 ns

Product Type:

MOSFET

Rise Time:

33 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19 ns

Typical Turn-On Delay Time:

6 ns

Unit Weight:

0.011640 oz

Tags

STP7N5, STP7N, STP7, STP