SI7852DP-T1-GE3

Mfr. #:: SI7852DP-T1-GE3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
ライフサイクル:: メーカー新製品
データシート:: SI7852DP-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

包装: リール

パーツエイリアス: SI7852DP-GE3

単位重量: 0.017870 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SO-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 1.9 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 31 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 7.6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 80 V

Rds-On-Drain-Source-Resistance: 16.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 40 ns

典型的なターンオン遅延時間: 17 ns

チャネルモード: 強化

Tags: SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7852DP-T1-GE3 説明

***et Europe: Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R

***ark: N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Market price

モデル	メーカー	説明	ストック	価格
SI7852DP-T1-GE3 DISTI # SI7852DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.5508
SI7852DP-T1-GE3 DISTI # SI7852DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.6814 500:$1.9936 100:$2.4620 10:$3.0020 1:$3.3600
SI7852DP-T1-GE3 DISTI # SI7852DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.6814 500:$1.9936 100:$2.4620 10:$3.0020 1:$3.3600
SI7852DP-T1-GE3 DISTI # SI7852DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7852DP-T1-GE3 DISTI # SI7852DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2189 6000:$1.1829 12000:$1.1349 18000:$1.1029 30000:$1.0739
SI7852DP-T1-GE3 DISTI # 84R8079	Vishay Intertechnologies	N CHANNEL MOSFET, 80V, 7.6A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1:$3.0600 25:$2.5400 50:$2.2600 100:$1.9700 250:$1.8500 500:$1.7300 1000:$1.6500
SI7852DP-T1-GE3 DISTI # 15R5226	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.9W RoHS Compliant: Yes	0	1:$1.6700 2000:$1.5900 4000:$1.4900 8000:$1.3800 12000:$1.3300 20000:$1.3100
SI7852DP-T1-GE3 DISTI # 781-SI7852DP-GE3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.0600 10:$2.5400 100:$1.9700 500:$1.7300 1000:$1.6500 3000:$1.6400
SI7852DP-T1-GE3 DISTI # 2283668	Vishay Intertechnologies	MOSFET, N-CH, 80V, PPAK-SO8 RoHS: Compliant	0	1:$4.8500 10:$4.0300 100:$3.1200 500:$2.7500 1000:$2.6200 3000:$2.6000
SI7852DP-T1-GE3 DISTI # 2283668	Vishay Intertechnologies	MOSFET, N-CH, 80V, PPAK-SO8 RoHS: Compliant	0	1:£2.6600 10:£1.9600 100:£1.5100 250:£1.4200 500:£1.3300
SI7852DP-T1-GE3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8	Americas -

関連製品

画像	モデル	説明
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
	Mfr.#: SI7852DP OMO.#: OMO-SI7852DP-1190	ブランドニューオリジナル
	Mfr.#: SI7852DP-T1 OMO.#: OMO-SI7852DP-T1-1190	MOSFET RECOMMENDED ALT 781-SI7852DP-E3
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3-VISHAY	MOSFET N-CH 80V 7.6A PPAK SO-8
	Mfr.#: SI7852DP-T1-E3. OMO.#: OMO-SI7852DP-T1-E3--1190	ブランドニューオリジナル
	Mfr.#: SI7852DP-TI-E3 OMO.#: OMO-SI7852DP-TI-E3-1190	ブランドニューオリジナル
	Mfr.#: SI7852DPT1 OMO.#: OMO-SI7852DPT1-1190	ブランドニューオリジナル

可用性

ストック:: Available
注文中:: 3000
数量を入力してください:

SI7852DP-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。

参考価格（USD）

量
単価
小計金額

1: ~~$1.61~~; ~~$1.61~~

10: ~~$1.53~~; ~~$15.30~~

100: ~~$1.45~~; ~~$144.98~~

500: ~~$1.37~~; ~~$684.60~~

1000: ~~$1.29~~; ~~$1 288.70~~

2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。

皮切りに

SI7852DP-T1 4
SI7852DP-T 5
SI7852D 7
SI7852 10
SI785 44
SI78 277
SI7 1547

SI7852DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes