STD8NM60N-1

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

7 A

Rds On - Drain-Source Resistance:

650 mOhms

Vgs - Gate-Source Voltage:

25 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

70 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

6.2 mm

Length:

6.6 mm

Series:

STx8NM60N

Transistor Type:

1 N-Channel

Width:

2.4 mm

Brand:

STMicroelectronics

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

12 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.139332 oz

Tags

STD8NM60N, STD8NM6, STD8NM, STD8N, STD8, STD