275-102N06A-00

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Id - Continuous Drain Current:

8 A

Vds - Drain-Source Breakdown Voltage:

1000 V

Rds On - Drain-Source Resistance:

1.5 Ohms

Output Power:

590 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Mounting Style:

SMD/SMT

Package / Case:

SMD-6

Packaging:

Tube

Operating Frequency:

100 MHz

Type:

RF Power MOSFET

Brand:

IXYS

Forward Transconductance - Min:

2.5 S

Number of Channels:

1 Channel

Product Type:

RF MOSFET Transistors

Qg - Gate Charge:

46 nC

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

20 V

Vgs th - Gate-Source Threshold Voltage:

3.5 V

Tags

275-10, 275-1, 275