FZ900R12KP4HOSA1

Mfr. #:: FZ900R12KP4HOSA1
メーカー:: Infineon Technologies
説明:: MOD IGBT MED PWR 62MM-2
ライフサイクル:: メーカー新製品
データシート:: FZ900R12KP4HOSA1 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: FZ900R12, FZ900R, FZ900, FZ90, FZ9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ900R12KP4HOSA1 説明

***et Europe: Trans IGBT Module N-CH 1.2KV 900A 4-pin 62MM-2

***ineon SCT: Our well-known 62 mm 1200 V single switch IGBT modules with IGBT4 are the right choice for your design, AG-62MM-2, RoHS

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 900A 2500000mW 4-Pin Case D-4 Box

*** Stop Electro: Insulated Gate Bipolar Transistor, 880A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Single switch, 1200V, RoHS

***el Electronic: IGBT MODULE 1200V 900A 2500W D4

***ark: PM-IGBT-TFS-D4 D4 Box RoHS Compliant: Yes

***ical: Trans IGBT Module N-CH 1200V 650A 2250000mW Automotive 4-Pin 62MM-2 Tray

***ark: Transistor, Igbt Module, 1.2Kv, 650A; Transistor Polarity:n Channel; Dc Collector Current:650A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2.25Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Caserohs Compliant: Yes

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***p One Stop: Trans IGBT Module N-CH 1200V 700A 3900000mW 5-Pin 62MM-2 Tray

***nell: TRANSISTOR, IGBT MODULE, 1.2KV, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 3.9kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra

***ark: TRANSISTOR, IGBT MODULE, 1.2KV, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:3.9kW; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT2 Fast for high-frequency switching are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ure Electronics: APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 600V 600A SP6

***el Electronic: IGBT MODULE 600V 700A 2300W SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 1100A I(C), 1700V V(BR)CES, N-Channel

***et Europe: Trans IGBT Module N-CH 1.7KV 1.1KA 4-Pin Case D 4

***rochip SCT: High Voltage Power Module, Single switch, 1700V, RoHS

***ark: PM-IGBT-TFS-D4 D4 Box RoHS Compliant: Yes

***i-Key: IGBT TRENCH SGL SWITCH 1700V D4

***el Electronic: IGBT MODULE 1700V 1100A 2900W D4

Market price

モデル	メーカー	説明	ストック	価格
FZ900R12KP4HOSA1 DISTI # FZ900R12KP4HOSA1-ND	Infineon Technologies AG	MOD IGBT MED PWR 62MM-2 RoHS: Compliant Min Qty: 10 Container: Tray	Temporarily Out of Stock	10:$148.6100
FZ900R12KP4HOSA1 DISTI # FZ900R12KP4HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FZ900R12KP4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$131.5900 60:$134.8900 40:$138.2900 20:$141.8900 10:$143.6900
FZ900R12KP4HOSA1 DISTI # SP000524484	Infineon Technologies AG	MEDIUM POWER 62MM (Alt: SP000524484) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€130.7900 500:€132.5900 100:€134.1900 50:€136.4900 25:€143.6900 10:€145.2900 1:€149.7900
FZ900R12KP4 DISTI # 641-FZ900R12KP4	Infineon Technologies AG	IGBT Modules IGBT 1200V 900A	5	1:$158.4300 5:$154.6200 10:$150.7800 25:$148.6700

画像	モデル	説明
	Mfr.#: FZ900R12KP4 OMO.#: OMO-FZ900R12KP4	IGBT Modules IGBT 1200V 900A
	Mfr.#: FZ900R12KP4 OMO.#: OMO-FZ900R12KP4-125	IGBT Modules IGBT 1200V 900A
	Mfr.#: FZ900R12KE4 OMO.#: OMO-FZ900R12KE4-125	IGBT Modules 1200V 900A
	Mfr.#: FZ900R12KE4HOSA1 OMO.#: OMO-FZ900R12KE4HOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE 1200V 900A
	Mfr.#: FZ900R12KF3 OMO.#: OMO-FZ900R12KF3-1190	ブランドニューオリジナル
	Mfr.#: FZ900R12KF4 OMO.#: OMO-FZ900R12KF4-1190	ブランドニューオリジナル
	Mfr.#: FZ900R12KF5 OMO.#: OMO-FZ900R12KF5-1190	IGBT Modules
	Mfr.#: FZ900R12KF6 OMO.#: OMO-FZ900R12KF6-1190	ブランドニューオリジナル
	Mfr.#: FZ900R12KP4HOSA1 OMO.#: OMO-FZ900R12KP4HOSA1-INFINEON-TECHNOLOGIES	MOD IGBT MED PWR 62MM-2
	Mfr.#: FZ900R12KF5NOSA1 OMO.#: OMO-FZ900R12KF5NOSA1-INFINEON-TECHNOLOGIES	POWER MOD IGBT 1200V A-IHM130-2

FZ900R12KP4HOSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes