ZX3CD2S1M832TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

T

Mounting Style:

SMD/SMT

Package / Case:

MLP-832-8

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

25 V

Emitter- Base Voltage VEBO:

- 7.5 V

Maximum DC Collector Current:

3.5 A

Gain Bandwidth Product fT:

180 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

300

Height:

1 mm

Length:

3 mm

Packaging:

Reel

Width:

2 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 15 at 6 A, 2 V

Pd - Power Dissipation:

3000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

ZX3CD, ZX3C, ZX3