SI5902BDC-T1-E3

Mfr. #:: SI5902BDC-T1-E3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 30V 4.0A 3.12W
Lifecycle:: New from this manufacturer.
Datasheet:: SI5902BDC-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Tape & Reel (TR)

Part-Aliases: SI5902BDC-E3

Unit-Weight: 0.002998 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SMD, Flat Lead

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 1206-8 ChipFET

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 3.12W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 220pF @ 15V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 65 mOhm @ 3.1A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 7nC @ 10V

Pd-Power-Dissipation: 1.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 80 ns 12 ns

Rise-Time: 80 ns 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 3.7 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 65 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 12 ns 10 ns

Typical-Turn-On-Delay-Time: 15 ns 4 ns

Channel-Mode: Enhancement

Tags: SI5902B, SI5902, SI590, SI59, SI5

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5902BDC-T1-E3 Description

***ure Electronics: Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin Chip FET T/R

***ark: Transistor; Continuous Drain Current, Id:4000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
SI5902BDC-T1-E3 DISTI # V72:2272_09216236	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290 1:$1.0830
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1985In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5852
SI5902BDC-T1-E3 DISTI # 30316800	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R RoHS: Compliant	2408	1000:$0.5185 500:$0.6384 250:$0.7282 100:$0.7361 25:$0.9183 12:$0.9290
SI5902BDC-T1-E3 DISTI # SI5902BDC-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5529 6000:$0.5359 12000:$0.5139 18000:$0.4999 30000:$0.4869
SI5902BDC-T1-E3 DISTI # 16P3794	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, 1206,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes	0	1:$1.4300 25:$1.3600 50:$1.2300 100:$1.1100 250:$1.0100 500:$0.8400 1000:$0.7450
SI5902BDC-T1-E3 DISTI # 75M5527	Vishay Intertechnologies	DUAL N-CH 30V (D-S) MOSFET ROHS COMPLIANT: YES	0	1:$0.6540 1000:$0.6270 2000:$0.5700 4000:$0.5130 6000:$0.4940 10000:$0.4830
SI5902BDC-T1-E3 DISTI # 781-SI5902BDC-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	2710	1:$1.3300 10:$1.1000 100:$0.8400 500:$0.7230 1000:$0.5700 3000:$0.5320
SI5902BDCT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 6000
SI5902BDC-T1-E3			1918
SI5902BDC-T1-E3 DISTI # C1S803603325600	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2408	250:$0.7282 100:$0.7361 25:$0.9183 10:$0.9290
SI5902BDC-T1-E3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3	MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
	Mfr.#: SI5902BDC-T1-E3 OMO.#: OMO-SI5902BDC-T1-E3-VISHAY	IGBT Transistors MOSFET 30V 4.0A 3.12W
	Mfr.#: SI5902BDC-T1-GE3 OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY	MOSFET 2N-CH 30V 4A 1206-8
	Mfr.#: SI5902BDCT1E3 OMO.#: OMO-SI5902BDCT1E3-1190	Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI5902BDC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes