SIS427EDN-T1-GE3

Name: Vishay - SIS427EDN-T1-GE3
Brand: Vishay
SKU: OMO-2938183
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIS427EDN-T1-GE3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET -30V 10.6mOhm@-10V -50A P-CH
ライフサイクル:: メーカー新製品
データシート:: SIS427EDN-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: PowerPAKR 1212-8

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 52W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 1930pF @ 15V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 50A (Tc)

Rds-On-Max-Id-Vgs: 10.6 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

ゲートチャージ-Qg-Vgs: 66nC @ 10V

Pd-電力損失: 52 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 40 ns

Vgs-Gate-Source-Voltage: 25 V

Id-連続-ドレイン-電流: - 50 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 30 V

Vgs-th-Gate-Source-Threshold-Voltage: - 2.5 V

Rds-On-Drain-Source-Resistance: 17.7 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 28 ns

典型的なターンオン遅延時間: 45 ns

Qg-Gate-Charge: 43.5 nC

フォワード-相互コンダクタンス-最小: 32 S

Tags: SIS42, SIS4, SIS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS427EDN-T1-GE3 説明

***et Europe: Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R

***ment14 APAC: MOSFET, P CH, -30V, -50A, POWERPAK1212-8

***ark: N-CHANNEL 30-V (D-S) MOSFET

Market price

モデル	メーカー	説明	ストック	価格
SIS427EDN-T1-GE3 DISTI # V72:2272_09216167	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R RoHS: Compliant	303	250:$0.3636 100:$0.3675 25:$0.4569 10:$0.4622 1:$0.5479
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7895In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7895In Stock	1000:$0.3263 500:$0.4079 100:$0.5506 10:$0.7140 1:$0.8200
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 50A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.2871
SIS427EDN-T1-GE3 DISTI # 27066163	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK EP T/R RoHS: Compliant	303	250:$0.3636 100:$0.3675 28:$0.4569
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R (Alt: SIS427EDN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$3.4500 6000:$2.3793 9000:$1.7692 15000:$1.4375 30000:$1.3019 75000:$1.2546 150000:$1.2105
SIS427EDN-T1-GE3 DISTI # SIS427EDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 15A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS427EDN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2619 6000:$0.2539 12000:$0.2429 18000:$0.2369 30000:$0.2299
SIS427EDN-T1-GE3 DISTI # 99W9578	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	1:$0.3100 5000:$0.3030 10000:$0.2790 20000:$0.2610 30000:$0.2430 50000:$0.2330
SIS427EDN-T1-GE3 DISTI # 78-SIS427EDN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 RoHS: Compliant	3626	1:$0.7200 10:$0.5750 100:$0.4360 500:$0.3600 1000:$0.2880 3000:$0.2610
SIS427EDN-T1-GE3 DISTI # C1S803604990270	Vishay Intertechnologies	MOSFETs	303	250:$0.3636 100:$0.3675 25:$0.4569 10:$0.4622

SIS427EDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes