QS6M4TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-457T-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V, 20 V

Id - Continuous Drain Current:

1.5 A

Rds On - Drain-Source Resistance:

260 mOhms

Vgs - Gate-Source Voltage:

12 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.85 mm

Length:

2.9 mm

Product:

MOSFET Small Signal

Series:

QS6M4

Transistor Type:

1 N-Channel, 1 P-Channel

Type:

MOSFET

Width:

1.6 mm

Brand:

ROHM Semiconductor

Fall Time:

18 ns, 12 ns

Product Type:

MOSFET

Rise Time:

18 ns, 12 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns, 45 ns

Typical Turn-On Delay Time:

7 ns, 10 ns

Part # Aliases:

QS6M4

Unit Weight:

0.000494 oz

Tags

QS6M4, QS6M, QS6