IXFA5N100P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

5 A

Rds On - Drain-Source Resistance:

2.8 Ohms

Vgs th - Gate-Source Threshold Voltage:

6 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

33.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

250 W

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

4.83 mm

Length:

9.65 mm

Series:

IXFA5N100

Type:

Polar Power MOSFET HiPerFET

Width:

10.41 mm

Brand:

IXYS

Forward Transconductance - Min:

2.4 S

Fall Time:

37 ns

Product Type:

MOSFET

Rise Time:

13 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

12 ns

Unit Weight:

0.081130 oz

Tags

IXFA5N, IXFA5, IXFA, IXF