SIA436DJ-T1-GE3

Mfr. #:: SIA436DJ-T1-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 8V 12A SC70-6L
ライフサイクル:: メーカー新製品
データシート:: SIA436DJ-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SIA436DJ-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIA436DJ-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SC-70-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SC-70-6 Single

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 19W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 8V

入力-静電容量-Ciss-Vds: 1508pF @ 4V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 9.4 mOhm @ 15.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

ゲートチャージ-Qg-Vgs: 25.2nC @ 5V

Pd-電力損失: 19 W

Vgs-Gate-Source-Voltage: 5 V

Id-連続-ドレイン-電流: 12 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 8 V

Rds-On-Drain-Source-Resistance: 36 mOhms

トランジスタ-極性: Nチャネル

Tags: SIA436, SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA436DJ-T1-GE3 詳しくは

SIA436DJ N-Channel 8V TrenchFET® MOSFET: Vishay Siliconix's SIA436DJ N-Channel 8V TrenchFET® MOSFET is offered in the compact PowerPAK SC-70 package, and is designed to save valuable PCB space in portable electronics. This MOSFET's on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing n-channel device in the 2mm by 2mm footprint area. This ultra-low on resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ's on resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low voltage power rails common in handheld devices, providing longer battery operation between charges.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SIA436DJ-T1-GE3 DISTI # V72:2272_09216838	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	207	250:$0.3343 100:$0.3353 25:$0.4126 10:$0.4142 1:$0.4872
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12004In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12004In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2552
SIA436DJ-T1-GE3 DISTI # 27550109	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	3000:$0.2689
SIA436DJ-T1-GE3 DISTI # 26596996	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	207	250:$0.3343 100:$0.3353 29:$0.4126
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA436DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$3.2120 6000:$2.2152 9000:$1.6472 15000:$1.3383 30000:$1.2121 75000:$1.1680 150000:$1.1270
SIA436DJ-T1-GE3 DISTI # SIA436DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA436DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIA436DJ-T1-GE3 DISTI # 99W9414	Vishay Intertechnologies	MOSFET, N CHANNEL, 8V, 12A, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.2370 3000:$0.2360 6000:$0.2240 12000:$0.1990
SIA436DJ-T1-GE3 DISTI # 63W4103	Vishay Intertechnologies	MOSFET Transistor, N Channel, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV , RoHS Compliant: Yes	8702	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SIA436DJ-T1-GE3 DISTI # 70459575	Vishay Siliconix	MOSFET N-CH 8V 12A SC70-6L RoHS: Compliant	0	3000:$0.6260 6000:$0.4960
SIA436DJ-T1-GE3 DISTI # 78-SIA436DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant	2620	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 3000:$0.2320 6000:$0.2170
SIA436DJ-T1-GE3	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant	Americas -

画像	モデル	説明
	Mfr.#: SIA436DJ-T1-GE3 OMO.#: OMO-SIA436DJ-T1-GE3	MOSFET 8V Vds 5V Vgs PowerPAK SC-70
	Mfr.#: SIA436DJ-T4-GE3 OMO.#: OMO-SIA436DJ-T4-GE3	MOSFET 8V Vds 5V Vgs PowerPAK SC-70
	Mfr.#: SIA436DJ-T1-GE3 OMO.#: OMO-SIA436DJ-T1-GE3-VISHAY	MOSFET N-CH 8V 12A SC70-6L
	Mfr.#: SIA436DJT1GE3 OMO.#: OMO-SIA436DJT1GE3-1190	ブランドニューオリジナル

SIA436DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes