IPB60R160C6ATMA1

IPB60R160C6ATMA1
Mfr. #:
IPB60R160C6ATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
ライフサイクル:
メーカー新製品
データシート:
IPB60R160C6ATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
23.8 A
Rds On-ドレイン-ソース抵抗:
140 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
75 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
176 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
シリーズ:
CoolMOS C6
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
8 ns
製品タイプ:
MOSFET
立ち上がり時間:
13 ns
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
96 ns
典型的なターンオン遅延時間:
13 ns
パーツ番号エイリアス:
IPB60R160C6 IPB6R16C6XT SP000687552
単位重量:
0.139332 oz
Tags
IPB60R160, IPB60R16, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 160 mOhm 75 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 650V 23.8A 3-Pin TO-263 T/R
***Components
MOSFET N-CH 600V 23.8A COOLMOS TO263
***an P&S
600V,23.8A,N-ch power MOSFET
*** Source Electronics
MOSFET N-CH 600V 23.8A TO263
***ronik
CoolMOS 600V 23A 160mOhm TO263
***ark
MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; ;RoHS Compliant: Yes
***nell
MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:2; Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V
***ment14 APAC
MOSFET,N CH,600V,23.8A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
モデル メーカー 説明 ストック 価格
IPB60R160C6ATMA1
DISTI # V72:2272_06376958
Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.7680
  • 500:$2.0950
  • 250:$2.3320
  • 100:$2.4610
  • 25:$2.5310
  • 10:$2.8120
  • 1:$3.6597
IPB60R160C6ATMA1
DISTI # V36:1790_06376958
Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB60R160C6ATMA1
    DISTI # IPB60R160C6ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 23.8A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    637In Stock
    • 500:$2.2771
    • 100:$2.6750
    • 10:$3.2650
    • 1:$3.6400
    IPB60R160C6ATMA1
    DISTI # IPB60R160C6ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 600V 23.8A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    637In Stock
    • 500:$2.2771
    • 100:$2.6750
    • 10:$3.2650
    • 1:$3.6400
    IPB60R160C6ATMA1
    DISTI # IPB60R160C6ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 600V 23.8A TO263
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Limited Supply - Call
    • 2000:$1.7758
    • 1000:$1.8645
    IPB60R160C6ATMA1
    DISTI # 33595035
    Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$1.7680
    • 500:$2.0950
    • 250:$2.3320
    • 100:$2.4610
    • 25:$2.5310
    • 10:$2.8120
    • 4:$3.6597
    IPB60R160C6ATMA1
    DISTI # IPB60R160C6ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R160C6ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 4000:$1.5900
    • 6000:$1.5900
    • 10000:$1.5900
    • 2000:$1.6900
    • 1000:$1.7900
    IPB60R160C6ATMA1
    DISTI # 30T1829
    Infineon Technologies AGMOSFET,N CH,600V,23.8A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:23.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes564
    • 500:$2.1200
    • 250:$2.3600
    • 100:$2.4900
    • 50:$2.6200
    • 25:$2.7500
    • 10:$2.8800
    • 1:$3.3800
    IPB60R160C6ATMA1
    DISTI # 726-IPB60R160C6ATMA1
    Infineon Technologies AGMOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    1000
    • 1:$3.3500
    • 10:$2.8500
    • 100:$2.4700
    • 250:$2.3400
    • 500:$2.1000
    • 1000:$1.7700
    • 2000:$1.6800
    IPB60R160C6
    DISTI # 726-IPB60R160C6
    Infineon Technologies AGMOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
    RoHS: Compliant
    3009
    • 1:$3.3500
    • 10:$2.8500
    • 100:$2.4700
    • 250:$2.3400
    • 500:$2.1000
    • 1000:$1.7700
    • 2000:$1.6800
    IPB60R160C6ATMA1
    DISTI # 1860815
    Infineon Technologies AGMOSFET,N CH,600V,23.8A,TO263564
    • 500:£1.4400
    • 250:£1.6000
    • 100:£1.7000
    • 10:£1.9600
    • 1:£2.8800
    画像 モデル 説明
    IPB60R160C6ATMA1

    Mfr.#: IPB60R160C6ATMA1

    OMO.#: OMO-IPB60R160C6ATMA1

    MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
    IPB60R160C6

    Mfr.#: IPB60R160C6

    OMO.#: OMO-IPB60R160C6

    MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6
    IPB60R165CP

    Mfr.#: IPB60R165CP

    OMO.#: OMO-IPB60R165CP

    MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
    IPB60R165CPATMA1

    Mfr.#: IPB60R165CPATMA1

    OMO.#: OMO-IPB60R165CPATMA1

    MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
    IPB60R165CPATMA1

    Mfr.#: IPB60R165CPATMA1

    OMO.#: OMO-IPB60R165CPATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 21A D2PAK
    IPB60R160C6ATMA1

    Mfr.#: IPB60R160C6ATMA1

    OMO.#: OMO-IPB60R160C6ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 23.8A TO263
    IPB60R160P6ATMA1

    Mfr.#: IPB60R160P6ATMA1

    OMO.#: OMO-IPB60R160P6ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH TO263-3
    IPB60R160C6

    Mfr.#: IPB60R160C6

    OMO.#: OMO-IPB60R160C6-1190

    Trans MOSFET N-CH 650V 23.8A 3-Pin TO-263 T/R (Alt: IPB60R160C6)
    IPB60R165CP  6R165P

    Mfr.#: IPB60R165CP 6R165P

    OMO.#: OMO-IPB60R165CP-6R165P-1190

    ブランドニューオリジナル
    IPB60R165CP

    Mfr.#: IPB60R165CP

    OMO.#: OMO-IPB60R165CP-126

    IGBT Transistors MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
    可用性
    ストック:
    Available
    注文中:
    1984
    数量を入力してください:
    IPB60R160C6ATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $3.35
    $3.35
    10
    $2.85
    $28.50
    100
    $2.47
    $247.00
    250
    $2.34
    $585.00
    500
    $2.10
    $1 050.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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