SK60GAL123

SK60GAL123
Mfr. #:
SK60GAL123
メーカー:
SEMIKRON
説明:
ライフサイクル:
メーカー新製品
データシート:
SK60GAL123 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
セミクロン
製品カテゴリ
モジュール
Tags
SK60GAL, SK60GA, SK60G, SK60, SK6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Array & Module Transistor, N Channel, 58 A, 3 V, 600 W, 1.2 Kv, Semitop 2
***hardson RFPD
POWER IGBT TRANSISTOR
***ment14 APAC
Prices include import duty and tax.
***omponent
Semikron power module
***ikron
not recommended for new design Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) N-channel homogeneous silicon structure (NPT-Non punch-through IGBT) High short circuit capability Low tail current with low temperature dependence Typical Applications: Switching (not for linear use) Inverter Switched mode power supplies UPS
***nell
IGBT MODULE, CHOPPER, 1200V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:58A; Voltage, Vce Sat Max:3V; Case Style:SEMITOP 2; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:40A; Current Ic av:58A; Current, Icm Pulsed:57A; External Depth:28mm; Fixing Centres:38mm; Fixing Hole Diameter:2mm; Power, Pd:600W; SMD Marking:SEMITOP2; Temperature, Current:25°C; Time, Rise:90ns; Transistors, No. of:1; Width, External:40.5mm; Voltage:1200V
モデル メーカー 説明 ストック 価格
SK 60 GAL 123
DISTI # 77R2313
SEMIKRONIGBT Array & Module Transistor, N Channel, 58 A, 3 V, 600 W, 1.2 kV, SEMITOP 20
    SK60GAL123
    DISTI # 1095545
    SEMIKRON 
    RoHS: Compliant
    0
    • 25:$50.9700
    • 1:$52.9300
    画像 モデル 説明
    SK60GAL123

    Mfr.#: SK60GAL123

    OMO.#: OMO-SK60GAL123-1190

    ブランドニューオリジナル
    SK60GAL125

    Mfr.#: SK60GAL125

    OMO.#: OMO-SK60GAL125-1190

    POWER IGBT TRANSISTOR
    SK60GAL128

    Mfr.#: SK60GAL128

    OMO.#: OMO-SK60GAL128-1190

    ブランドニューオリジナル
    SK60GAR125

    Mfr.#: SK60GAR125

    OMO.#: OMO-SK60GAR125-1190

    ブランドニューオリジナル
    SK60GB123

    Mfr.#: SK60GB123

    OMO.#: OMO-SK60GB123-1190

    TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.2kV V(BR)CES,40A I(C)
    SK60GB123D

    Mfr.#: SK60GB123D

    OMO.#: OMO-SK60GB123D-1190

    ブランドニューオリジナル
    SK60GB125

    Mfr.#: SK60GB125

    OMO.#: OMO-SK60GB125-1190

    POWER IGBT TRANSISTOR
    SK60GD123

    Mfr.#: SK60GD123

    OMO.#: OMO-SK60GD123-1190

    ブランドニューオリジナル
    SK60GM065

    Mfr.#: SK60GM065

    OMO.#: OMO-SK60GM065-1190

    ブランドニューオリジナル
    SK60GM123

    Mfr.#: SK60GM123

    OMO.#: OMO-SK60GM123-1190

    IGBT Array & Module Transistor, N Channel, 3 V, 600 W, 1.2 kV, SEMITOP 2
    可用性
    ストック:
    Available
    注文中:
    4500
    数量を入力してください:
    SK60GAL123の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
    皮切りに
    Top