SIA415DJ-T1-GE3

Name: Vishay - SIA415DJ-T1-GE3
Brand: Vishay
SKU: OMO-2826373
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA415DJ-T1-GE3
メーカー:: Vishay
説明:: IGBT Transistors MOSFET 20V 12A 19W 35mohm @ 4.5V
ライフサイクル:: メーカー新製品
データシート:: SIA415DJ-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIA415DJ-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SC-70-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SC-70-6 Single

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 19W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 1250pF @ 10V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.6A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 47nC @ 10V

Pd-電力損失: 19 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 20 ns

立ち上がり時間: 50 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 12 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Rds-On-Drain-Source-Resistance: 35 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 45 ns

典型的なターンオン遅延時間: 25 ns

フォワード-相互コンダクタンス-最小: 20 S

チャネルモード: 強化

Tags: SIA415, SIA41, SIA4, SIA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA415DJ-T1-GE3 説明

***ure Electronics: SiA415DJ Series P-Channel 20 V 0.035 Ohms SMT Power Mosfet - PowerPAK SC-70-6L

***et: Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R

***ronik: P-CHANNEL-FET12 A 20V PP-SC70-6 RoHSconf

***ment14 APAC: P CHANNEL MOSFET, -20V, 12A, SC-70; Tran; P CHANNEL MOSFET, -20V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-1.5V

Market price

モデル	メーカー	説明	ストック	価格
SIA415DJ-T1-GE3 DISTI # V72:2272_09216827	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	75000:$0.3001 30000:$0.3061 15000:$0.3120 6000:$0.3179 3000:$0.3533 1000:$0.3925 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5397 25:$0.5603 10:$0.6225 1:$0.7260
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.4004
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	731In Stock	500:$0.5597 100:$0.7217 10:$0.9130 1:$1.0300
SIA415DJ-T1-GE3 DISTI # SIA415DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA415DJ-T1-GE3 DISTI # 25790298	Vishay Intertechnologies	Trans MOSFET P-CH 20V 8.4A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2980	1000:$0.3937 500:$0.4274 250:$0.4869 100:$0.4919 50:$0.5429 25:$0.5603 20:$0.6225
SIA415DJ-T1-GE3 DISTI # 16P3613	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 12A, SC-70,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.5V RoHS Compliant: Yes	0
SIA415DJ-T1-GE3 DISTI # 781-SIA415DJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs PowerPAK SC-70-6L RoHS: Compliant	0
SIA415DJ-T1-GE3 DISTI # C1S803601730428	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2980	100:$0.4919 50:$0.5429 25:$0.5603 10:$0.6225

SIA415DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes