IPD09N03LA G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

14.8 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

63 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

46 S / 23 S

Fall Time:

3.4 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

5.6 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

7 ns

Unit Weight:

0.139332 oz

Tags

IPD09N03LAG, IPD09N03LA, IPD09N03L, IPD09N03, IPD09N0, IPD09N, IPD09, IPD0, IPD