FDU6676AS

FDU6676AS
Mfr. #:
FDU6676AS
メーカー:
ON Semiconductor
説明:
MOSFET N-CH 30V 90A IPAK
ライフサイクル:
メーカー新製品
データシート:
FDU6676AS データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
FDU6676, FDU667, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
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MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
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Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
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Power MOSFET 24V 80A 5.8 Single N-Channel DPAK
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NFET DPAK 30A 25V 0.006R - Rail/Tube
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Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:80A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):5.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:75W ;RoHS Compliant: Yes
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Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK
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14 A 25 V 0.006 ohm N-CHANNEL Si POWER MOSFET
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Power MOSFET 25V 97A Single N-Channel
***r Electronics
Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:17.7A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):4.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes
モデル メーカー 説明 ストック 価格
FDU6676AS
DISTI # FDU6676AS-ND
ON SemiconductorMOSFET N-CH 30V 90A IPAK
RoHS: Compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    FDU6676AS
    DISTI # 512-FDU6676AS
    ON SemiconductorMOSFET 30V N-Channel PowerTrench SyncFET
    RoHS: Compliant
    0
      FDU6676ASFairchild Semiconductor CorporationPower Field-Effect Transistor, 90A I(D), 30V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant
      1708
      • 1000:$0.2600
      • 500:$0.2800
      • 100:$0.2900
      • 25:$0.3000
      • 1:$0.3200
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      Mfr.#: FDU6612A

      OMO.#: OMO-FDU6612A-ON-SEMICONDUCTOR

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      Mfr.#: FDU6644

      OMO.#: OMO-FDU6644-1190

      Power Field-Effect Transistor, 67A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      FDU6676AS

      Mfr.#: FDU6676AS

      OMO.#: OMO-FDU6676AS-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 90A IPAK
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      Mfr.#: FDU6676ASNL

      OMO.#: OMO-FDU6676ASNL-1190

      ブランドニューオリジナル
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      Mfr.#: FDU6680A(Q)

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      FDU6680FSC

      Mfr.#: FDU6680FSC

      OMO.#: OMO-FDU6680FSC-1190

      ブランドニューオリジナル
      FDU6688-Q

      Mfr.#: FDU6688-Q

      OMO.#: OMO-FDU6688-Q-1190

      ブランドニューオリジナル
      FDU6N50FTU

      Mfr.#: FDU6N50FTU

      OMO.#: OMO-FDU6N50FTU-1190

      ブランドニューオリジナル
      可用性
      ストック:
      Available
      注文中:
      1000
      数量を入力してください:
      FDU6676ASの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.39
      $0.39
      10
      $0.37
      $3.70
      100
      $0.35
      $35.10
      500
      $0.33
      $165.75
      1000
      $0.31
      $312.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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