SEMIX101GD066HDS

Mfr. #:: SEMIX101GD066HDS
メーカー:: SEMIKRON
説明:
ライフサイクル:: メーカー新製品
データシート:: SEMIX101GD066HDS データシート
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製品属性
属性値

Tags: SEMIX10, SEMIX1, SEMIX, SEMI, SEM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SEMIX101GD066HDS 説明

***(Formerly Allied Electronics): IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

***ikron: Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: Matrix Converter Resonant Inverter Current Source Inverter

***ark: IGBT MODULE, SIX, 600V, 139A; Continuous Collector Current:139A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

***nell: IGBT MODULE, 600V, 6 PACK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:120A; Voltage, Vce Sat Max:1.9V; Case Style:SEMiX 13s; Collector-to-Emitter Breakdown Voltage:600V; Current Ic Continuous b Max:90A; Current Ic av:120A; Current, Icm Pulsed:120A; External Depth:61.7mm; Fixing Centres:50mm; Fixing Hole Diameter:5.4mm; SMD Marking:SEMiX13s; Temperature, Current:25°C; Time, Rise:36ns; Transistors, No. of:6; Width, External:137.8mm; Voltage:600V

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***icontronic: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
SEMIX101GD066HDS DISTI # 70098327	SEMIKRON	IGBT HALFBRIDGE ULTRAFAST,1200V,SEMITRANS RoHS: Not Compliant	0	1:$167.6800 4:$156.2100 48:$146.2000 96:$137.4100 192:$129.6100

画像	モデル	説明
	Mfr.#: SEMIX101GD066HDS OMO.#: OMO-SEMIX101GD066HDS-1190	ブランドニューオリジナル
	Mfr.#: SEMIX101GD126HDS OMO.#: OMO-SEMIX101GD126HDS-1190	IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
	Mfr.#: SEMIX101GD128DC OMO.#: OMO-SEMIX101GD128DC-1190	ブランドニューオリジナル
	Mfr.#: SEMIX101GD128DS OMO.#: OMO-SEMIX101GD128DS-1190	ブランドニューオリジナル
	Mfr.#: SEMIX101GD12E4S OMO.#: OMO-SEMIX101GD12E4S-1190	ブランドニューオリジナル
	Mfr.#: SEMIX101GD12T4S OMO.#: OMO-SEMIX101GD12T4S-1190	ブランドニューオリジナル

SEMIX101GD066HDS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes