SIHW47N65E-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247AD-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

47 A

Rds On - Drain-Source Resistance:

72 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

182 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

417 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Bulk

Series:

E

Brand:

Vishay / Siliconix

Fall Time:

103 ns

Product Type:

MOSFET

Rise Time:

87 ns

Factory Pack Quantity:

480

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

156 ns

Typical Turn-On Delay Time:

47 ns

Unit Weight:

1.340411 oz

Tags

SIHW4, SIHW, SIH