PSMN015-110P,127

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

110 V

Id - Continuous Drain Current:

75 A

Rds On - Drain-Source Resistance:

40.5 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.4 mm

Length:

10.3 mm

Transistor Type:

1 N-Channel

Width:

4.7 mm

Brand:

Nexperia

Fall Time:

50 ns

Product Type:

MOSFET

Rise Time:

65 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

95 ns

Typical Turn-On Delay Time:

25 ns

Part # Aliases:

PSMN015-110P

Unit Weight:

0.211644 oz

Tags

PSMN015-11, PSMN015-1, PSMN015, PSMN01, PSMN0, PSMN, PSM