IPW50R190CEFKSA1

Mfr. #:: IPW50R190CEFKSA1
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 550V 63A TO247-3
ライフサイクル:: メーカー新製品
データシート:: IPW50R190CEFKSA1 データシート
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: IPW50R190

包装: チューブ

パーツエイリアス: IPW50R190CE SP000850798

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

商標名: CoolMOS

パッケージ-ケース: TO-247-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 127 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 7.5 ns

立ち上がり時間: 8.5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 63 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 500 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 190 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 54 ns

典型的なターンオン遅延時間: 9.5 ns

Qg-Gate-Charge: 47.2 nC

Tags: IPW50R190, IPW50R19, IPW50R1, IPW50, IPW5, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW50R190CEFKSA1 説明

***et: Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube

***ure Electronics: 500V, 0.19 ohms, 63A, TO-247 CoolMOS Power Transistor

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

Market price

モデル	メーカー	説明	ストック	価格
IPW50R190CEFKSA1 DISTI # IPW50R190CEFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 500V 18.5A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW50R190CEFKSA1 DISTI # 50Y2084	Infineon Technologies AG	MOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V RoHS Compliant: Yes	0
IPW50R190CEFKSA1 DISTI # 726-IPW50R190CEFKSA1	Infineon Technologies AG	MOSFET N-Ch 500V 63A TO247-3 RoHS: Compliant	1	1:$2.1200 10:$1.8000 100:$1.4400 500:$1.2600 1000:$1.0500 2500:$0.9720 5000:$0.9360
IPW50R190CE DISTI # 726-IPW50R190CE	Infineon Technologies AG	MOSFET N-Ch 500V 63A TO247-3 RoHS: Compliant	0	1:$2.1200 10:$1.8000 100:$1.4400
IPW50R190CEFKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	69744	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
IPW50R190CEFKSA1 DISTI # 2480873	Infineon Technologies AG	MOSFET, N-CH, 500V, 18.5A, TO-247-3 RoHS: Compliant	0	1:$3.2400

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	Mfr.#: IPW50R190CEFKSA1 OMO.#: OMO-IPW50R190CEFKSA1-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET N-Ch 550V 63A TO247-3