MRF6V2150NBR5

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

E

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

110 V

Gain:

25 dB

Output Power:

150 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

TO-272-4

Packaging:

Reel

Configuration:

Single Dual Drain Dual Gate

Height:

2.64 mm

Length:

23.67 mm

Operating Frequency:

220 MHz

Series:

MRF6V2150N

Type:

RF Power MOSFET

Width:

9.07 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Moisture Sensitive:

Yes

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 0.5 V, 12 V

Vgs th - Gate-Source Threshold Voltage:

1.62 V

Part # Aliases:

935316841578

Unit Weight:

0.067412 oz

Tags

MRF6V2150NBR, MRF6V2150NB, MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF