MRF6V2150NBR stock, MRF6V2150NBR, MRF6V2150NBR1


PartNumber	MRF6V2150NBR1	MRF6V2150NBR5	MRF6V2150NBR
Description	RF MOSFET Transistors VHV6 150W	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
Manufacturer	NXP	NXP	FSL
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	Module
RoHS	E	E	-
Transistor Polarity	N-Channel	N-Channel	N-Channel
Technology	Si	Si	Si
Vds Drain Source Breakdown Voltage	110 V	110 V	-
Gain	25 dB	25 dB	25 dB
Output Power	150 W	150 W	150 W
Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-272-4	TO-272-4	-
Packaging	Reel	Reel	Reel
Configuration	Single Dual Drain Dual Gate	Single Dual Drain Dual Gate	-
Height	2.64 mm	2.64 mm	-
Length	23.67 mm	23.67 mm	-
Operating Frequency	220 MHz	220 MHz	220 MHz
Series	MRF6V2150N	MRF6V2150N	MRF6V2150N
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Width	9.07 mm	9.07 mm	-
Brand	NXP / Freescale	NXP / Freescale	-
Channel Mode	Enhancement	Enhancement	-
Moisture Sensitive	Yes	Yes	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	500	50	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 0.5 V, 12 V	- 0.5 V, 12 V	-
Vgs th Gate Source Threshold Voltage	1.62 V	1.62 V	-
Part # Aliases	935316841528	935316841578	-
Unit Weight	0.067412 oz	0.067412 oz	0.067412 oz
Package Case	-	-	TO-272 WB EP
Vgs Gate Source Voltage	-	-	- 0.5 V 12 V
Vds Drain Source Breakdown Voltage	-	-	110 V
Vgs th Gate Source Threshold Voltage	-	-	1.62 V

Search Part Number : "MRF6V2150NBR", Match & Start with "MRF6V2150NBR" - Total : 5

Manufacturer	Part #	Description
NXP / Freescale	MRF6V2150NBR1	RF MOSFET Transistors VHV6 150W
NXP / Freescale	MRF6V2150NBR5	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
	MRF6V2150NBR	New and Original
NXP Semiconductors	MRF6V2150NBR5	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
NXP Semiconductors	MRF6V2150NBR1	RF MOSFET Transistors VHV6 150W

MRF6V2150NBR