BFR840L3RHESD BOARD

BFR840L3RHESD BOARD
Mfr. #:
BFR840L3RHESD BOARD
メーカー:
Infineon Technologies AG
説明:
Eval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
ライフサイクル:
メーカー新製品
データシート:
BFR840L3RHESD BOARD データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
BFR840, BFR84, BFR8, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed
***et Europe
Eval Board for BFR840L3RHESD Transistor
***ineon
The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board. | Summary of Features: Robust ultra low noise amplifier based on Infineons reliable high volume SiGe:C bipolar technology Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness Very high transition frequency fT = 75 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA High gain |S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Pb free (RoHS compliant) and halogen free very small thin leadless package (package height 0.31 mm, ideal for modules) Qualification report according to AEC-Q101 available
モデル メーカー 説明 ストック 価格
BFR840L3RHESD BOARD
DISTI # SP000982226
Infineon Technologies AGEval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
RoHS: Compliant
Min Qty: 1
Europe - 0
    BFR840L3RHESDBOARDTOBO1
    DISTI # 726-BFR840L3RHESDBRD
    Infineon Technologies AGRF Development Tools
    RoHS: Not compliant
    0
      画像 モデル 説明
      BFR840L3RHESDE6327XTSA1

      Mfr.#: BFR840L3RHESDE6327XTSA1

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1

      RF Bipolar Transistors RF BIP TRANSISTORS
      BFR840L3RHESD

      Mfr.#: BFR840L3RHESD

      OMO.#: OMO-BFR840L3RHESD-INFINEON-TECHNOLOGIES

      ブランドニューオリジナル
      BFR840L3RHESD E6327

      Mfr.#: BFR840L3RHESD E6327

      OMO.#: OMO-BFR840L3RHESD-E6327-INFINEON-TECHNOLOGIES

      ブランドニューオリジナル
      BFR840L3RHESDE6327

      Mfr.#: BFR840L3RHESDE6327

      OMO.#: OMO-BFR840L3RHESDE6327-INFINEON-TECHNOLOGIES

      ブランドニューオリジナル
      BFR840L3RHESD BOARD

      Mfr.#: BFR840L3RHESD BOARD

      OMO.#: OMO-BFR840L3RHESD-BOARD-1190

      Eval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
      BFR840L3RHESDE6327XTSA1-CUT TAPE

      Mfr.#: BFR840L3RHESDE6327XTSA1-CUT TAPE

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1-CUT-TAPE-1190

      ブランドニューオリジナル
      BFR840L3RHESDE6327XTSA1

      Mfr.#: BFR840L3RHESDE6327XTSA1

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors RF BIP TRANSISTORS
      可用性
      ストック:
      Available
      注文中:
      3500
      数量を入力してください:
      BFR840L3RHESD BOARDの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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