SQD10950E_GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

250 V

Id - Continuous Drain Current:

11.5 A

Rds On - Drain-Source Resistance:

134.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

10.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Channel Mode:

Enhancement

Tradename:

TrenchFET

Brand:

Vishay / Siliconix

Fall Time:

3 ns

Product Type:

MOSFET

Rise Time:

3 ns

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

15 ns

Typical Turn-On Delay Time:

8 ns

Tags

SQD10, SQD1, SQD