GS8161E32DD-333I

GS8161E32DD-333I
Mfr. #:
GS8161E32DD-333I
メーカー:
GSI Technology
説明:
SRAM 2.5 or 3.3V 512K x 32 16M
ライフサイクル:
メーカー新製品
データシート:
GS8161E32DD-333I データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
GS8161E32DD-333I 詳しくは
製品属性
属性値
メーカー:
GSIテクノロジー
製品カテゴリ:
SRAM
メモリー容量:
18 Mbit
組織:
512 k x 32
アクセス時間:
4.5 ns
最大クロック周波数:
333 MHz
インターフェイスタイプ:
平行
供給電圧-最大:
3.6 V
供給電圧-最小:
2.3 V
供給電流-最大:
280 mA, 335 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
BGA-165
包装:
トレイ
メモリタイプ:
SDR
シリーズ:
GS8161E32DD
タイプ:
DCDパイプライン/フロースルー
ブランド:
GSIテクノロジー
感湿性:
はい
製品タイプ:
SRAM
ファクトリーパックの数量:
36
サブカテゴリ:
メモリとデータストレージ
商標名:
SyncBurst
Tags
GS8161E32DD-33, GS8161E32DD-3, GS8161E32DD, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 32 4.5ns/2.5ns 165-Pin FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et Europe
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 512KX36, 0.45NS, CMOS,
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
画像 モデル 説明
GS8161E32DD-250

Mfr.#: GS8161E32DD-250

OMO.#: OMO-GS8161E32DD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGD-333

Mfr.#: GS8161E36DGD-333

OMO.#: OMO-GS8161E36DGD-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-333I

Mfr.#: GS8161E36DGD-333I

OMO.#: OMO-GS8161E36DGD-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DD-200

Mfr.#: GS8161E36DD-200

OMO.#: OMO-GS8161E36DD-200

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150

Mfr.#: GS8161E36DGD-150

OMO.#: OMO-GS8161E36DGD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGT-333IV

Mfr.#: GS8161E36DGT-333IV

OMO.#: OMO-GS8161E36DGT-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-333

Mfr.#: GS8161E32DGT-333

OMO.#: OMO-GS8161E32DGT-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-200IV

Mfr.#: GS8161E32DGD-200IV

OMO.#: OMO-GS8161E32DGD-200IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-150IV

Mfr.#: GS8161E36DD-150IV

OMO.#: OMO-GS8161E36DD-150IV

SRAM 1.8/2.5V 512K x 36 18M
可用性
ストック:
Available
注文中:
4500
数量を入力してください:
GS8161E32DD-333Iの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
36
$21.64
$779.04
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
皮切りに
最新の製品
  • High-Temperature FASTON Housings
    TE Connectivity's FASTON terminals and connectors are a high quality, high temperature rated flag house that fully encloses the terminal.
  • 8462 Silicone Grease
    MG Chemicals' 8462 silicone grease is a water repelling, non-melting, and lubricating dielectric grease that provides superior corrosion and arcing resistance for connectors.
  • Compare GS8161E32DD-333I
    GS8161E32DD333 vs GS8161E32DD333I vs GS8161E32DD333IV
  • LGA 3647 Socket and Hardware
    TE Connectivity’s LGA 3647 socket and hardware meet the next-generation designs for Intel- and AMD-based LAG microprocessor packages for server, storage, data center, and high-performance computin
  • Super Duster™ 134 Aerosol Dusters
    MG Chemicals' Super Duster™ 134 non-flammable aerosol dusters remove microscopic dust, lint, and foreign particles from electro-mechanical instruments.
  • 15.0 mm High Power Terminal Block
    TE Connectivity AMP's high power terminal blocks are compact size, provide high current capacity, and are available in multiple positions.
Top