SIA416DJ-T1-GE3

SIA416DJ-T1-GE3
Mfr. #:
SIA416DJ-T1-GE3
メーカー:
Vishay
説明:
MOSFET N-CH 100V 11.3A SC70-6L
ライフサイクル:
メーカー新製品
データシート:
SIA416DJ-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
SIA41, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA416DJ-T1-GE3 N-channel MOSFET Transistor; 11.3 A; 100 V; 6-Pin PowerPAK SC-70
***Components
In a Pack of 20, N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3
***ure Electronics
N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L
***et Europe
Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
***ical
Trans MOSFET N-CH 100V 4.8A
***i-Key
MOSFET N-CH 100V 11.3A SC70-6L
***
N-CH 100V (D-S) MOSFET
***ronik
N-CH 100V 11,3A 68mOhm PPAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; No. Of Pins:6Pins Rohs Compliant: No
***nell
MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
モデル メーカー 説明 ストック 価格
SIA416DJ-T1-GE3
DISTI # V72:2272_09216729
Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
3000
  • 3000:$0.3442
  • 1000:$0.3726
  • 500:$0.4302
  • 250:$0.4670
  • 100:$0.5188
  • 25:$0.6545
  • 10:$0.7504
  • 1:$0.9251
SIA416DJ-T1-GE3
DISTI # V36:1790_09216729
Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
  • 3000000:$0.2945
  • 1500000:$0.2947
  • 300000:$0.3069
  • 30000:$0.3258
  • 3000:$0.3289
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1524In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1524In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 30000:$0.2394
  • 15000:$0.2457
  • 6000:$0.2551
  • 3000:$0.2741
SIA416DJ-T1-GE3
DISTI # 32404542
Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
3000
  • 28:$0.9251
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R (Alt: SIA416DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2179
  • 18000:€0.2339
  • 12000:€0.2539
  • 6000:€0.2949
  • 3000:€0.4319
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2308
  • 18000:$0.2371
  • 12000:$0.2439
  • 6000:$0.2542
  • 3000:$0.2620
SIA416DJ-T1-GE3
DISTI # 99W9412
Vishay IntertechnologiesMOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V0
  • 50000:$0.2330
  • 30000:$0.2430
  • 20000:$0.2610
  • 10000:$0.2790
  • 5000:$0.3030
  • 1:$0.3100
SIA416DJ-T1-GE3
DISTI # 19X1926
Vishay IntertechnologiesMOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes668
  • 2500:$0.3160
  • 1000:$0.3860
  • 500:$0.4230
  • 100:$0.4600
  • 50:$0.5040
  • 25:$0.5490
  • 10:$0.5940
  • 1:$0.7340
SIA416DJ-T1-GE3.
DISTI # 30AC0108
Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:4.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.068ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:19W,No. of Pins:6Pins RoHS Compliant: No0
  • 50000:$0.2330
  • 30000:$0.2430
  • 20000:$0.2610
  • 10000:$0.2790
  • 5000:$0.3030
  • 1:$0.3100
SIA416DJ-T1-GE3
DISTI # 70617011
Vishay SiliconixSIA416DJ-T1-GE3 N-channel MOSFET Transistor,11.3 A,100 V,6-Pin PowerPAK SC-70
RoHS: Compliant
0
  • 300:$0.3500
  • 600:$0.3200
  • 1500:$0.2900
  • 3000:$0.2800
SIA416DJ-T1-GE3
DISTI # 78-SIA416DJ-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant
5458
  • 1:$0.7100
  • 10:$0.5740
  • 100:$0.4350
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
  • 24000:$0.2250
SIA416DJ-T1-GE3
DISTI # 8181441P
Vishay IntertechnologiesTRANS MOSFET N-CH 100V 4.8A, RL10400
  • 200:£0.2140
  • 100:£0.2320
SIA416DJ-T1-GE3
DISTI # TMOS2344
Vishay IntertechnologiesN-CH 100V 11,3A 68mOhm PPAK
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$0.2337
SIA416DJ-T1-GE3
DISTI # 2364067
Vishay IntertechnologiesMOSFET, N-CH, 100V, 11.3A, PPAKSC70-6
RoHS: Compliant
533
  • 1000:$0.4700
  • 500:$0.5870
  • 100:$0.7430
  • 10:$0.9670
  • 1:$1.1000
SIA416DJ-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant
Americas - 33000
  • 3000:$0.2610
  • 6000:$0.2440
  • 12000:$0.2350
SIA416DJ-T1-GE3
DISTI # 2364067
Vishay IntertechnologiesMOSFET, N-CH, 100V, 11.3A, PPAKSC70-6613
  • 500:£0.3240
  • 250:£0.3820
  • 100:£0.4390
  • 10:£0.6210
  • 1:£0.7480
画像 モデル 説明
SIA416DJ-T1-GE3

Mfr.#: SIA416DJ-T1-GE3

OMO.#: OMO-SIA416DJ-T1-GE3

MOSFET 100V Vds 20V Vgs PowerPAK SC-70
SIA416DJ-T4-GE3

Mfr.#: SIA416DJ-T4-GE3

OMO.#: OMO-SIA416DJ-T4-GE3-1190

ブランドニューオリジナル
SIA416DJ-T1-GE3

Mfr.#: SIA416DJ-T1-GE3

OMO.#: OMO-SIA416DJ-T1-GE3-VISHAY

MOSFET N-CH 100V 11.3A SC70-6L
可用性
ストック:
Available
注文中:
2500
数量を入力してください:
SIA416DJ-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.35
$0.35
10
$0.33
$3.29
100
$0.31
$31.15
500
$0.29
$147.10
1000
$0.28
$276.90
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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