IXFQ20N50P3

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

300 mOhms

Vgs th - Gate-Source Threshold Voltage:

5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

36 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

380 W

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Series:

IXFQ20N50

Brand:

IXYS

Forward Transconductance - Min:

11 S

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

10 ns

Unit Weight:

0.056438 oz

Tags

IXFQ2, IXFQ, IXF