OMO ElectronicOMO Electronic
Expand menu
0 Cart

BSC047N08NS3 G

BSC047N08NS3 G
Mfr. #:
BSC047N08NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
Lifecycle:
New from this manufacturer.
Datasheet:
BSC047N08NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INF
Product Category
FETs - Single
Series
OptiMOS 3
Packaging
Reel
Part-Aliases
BSC047N08NS3GATMA1 BSC047N08NS3GXT SP000436372
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Quad Drain Triple Source
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
2.5 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
11 ns
Rise-Time
17 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
18 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Rds-On-Drain-Source-Resistance
4.7 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
44 ns
Typical-Turn-On-Delay-Time
18 ns
Channel-Mode
Enhancement
Tags
BSC047N08NS3G, BSC047N08NS3, BSC047, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.2348
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.4186
  • 500:$1.7121
  • 100:$2.2013
  • 10:$2.7390
  • 1:$3.0300
BSC047N08NS3GATMA1
DISTI # BSC047N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.4186
  • 500:$1.7121
  • 100:$2.2013
  • 10:$2.7390
  • 1:$3.0300
BSC047N08NS3G
DISTI # BSC047N08NS3 G		Infineon Technologies AGTrans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC047N08NS3GATMA1
    DISTI # BSC047N08NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.2439
    • 10000:$1.1989
    • 20000:$1.1549
    • 30000:$1.1169
    • 50000:$1.0969
    BSC047N08NS3GATMA1.
    DISTI # 31AC8216    		Infineon Technologies AGContinuous Drain Current Id:18A,Drain Source Voltage Vds:80V,Automotive Qualification Standard:-0
    • 1:$1.4900
    • 10000:$1.3900
    • 30000:$1.2900
    BSC047N08NS3 G
    DISTI # 60R2492    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes44
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    • 2500:$1.1700
    • 5000:$1.1300
    BSC047N08NS3GInfineon Technologies AGPower Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		21
    • 1000:$1.0400
    • 500:$1.0900
    • 100:$1.1400
    • 25:$1.1900
    • 1:$1.2800
    BSC047N08NS3 G
    DISTI # 726-BSC047N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    BSC047N08NS3GATMA1
    DISTI # 726-BSC047N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1600
    • 100:$1.7300
    • 500:$1.5200
    • 1000:$1.2600
    BSC047N08NS3GATMA1
    DISTI # 9064347P    		Infineon Technologies AGMOSFET N-CHANNEL 80V 18A TDSON8 EP, RL10
    • 100:£1.1470
    • 500:£1.0090
    • 1000:£0.8320
    • 2500:£0.7940
    BSC047N08NS3GInfineon Technologies AG18 A, 80 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET120
    • 51:$1.1250
    • 14:$1.5000
    • 1:$2.2500
    BSC047N08NS3GXTInfineon Technologies AG18 A, 80 V, 0.0047 OHM, N-CHANNEL, SI, POWER, MOSFET176
    • 102:$1.3365
    • 39:$1.4850
    • 1:$2.9700
    BSC047N08NS3GInfineon Technologies AG 96
      BSC047N08NS3 G
      DISTI # 1775444      		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TDSON-8
      RoHS: Compliant      		44
      • 1:$3.9200
      BSC047N08NS3 G
      DISTI # 1775444      		Infineon Technologies AGMOSFET, N CH, 100A, 80V, PG-TDSON-8
      RoHS: Compliant      		44
      • 1:£2.7800
      • 10:£1.9600
      • 100:£1.4700
      Image Part # Description
      BSC047N08NS3 G

      Mfr.#: BSC047N08NS3 G

      OMO.#: OMO-BSC047N08NS3-G

      		 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC047N08NS3GATMA1

      Mfr.#: BSC047N08NS3GATMA1

      OMO.#: OMO-BSC047N08NS3GATMA1

      		 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
      BSC047N08NS

      Mfr.#: BSC047N08NS

      OMO.#: OMO-BSC047N08NS-1190

      		 New and Original
      BSC047N08NS3

      Mfr.#: BSC047N08NS3

      OMO.#: OMO-BSC047N08NS3-1190

      		 New and Original
      BSC047N08NS3 G

      Mfr.#: BSC047N08NS3 G

      OMO.#: OMO-BSC047N08NS3-G-1190

      		 MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
      BSC047N08NS3G

      Mfr.#: BSC047N08NS3G

      OMO.#: OMO-BSC047N08NS3G-1190

      		 Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
      BSC047N08NS3GATMA1

      Mfr.#: BSC047N08NS3GATMA1

      OMO.#: OMO-BSC047N08NS3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 80V 100A TDSON-8
      BSC047N08NS3GS

      Mfr.#: BSC047N08NS3GS

      OMO.#: OMO-BSC047N08NS3GS-1190

      		 New and Original
      BSC047N08NSG

      Mfr.#: BSC047N08NSG

      OMO.#: OMO-BSC047N08NSG-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of BSC047N08NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.70
      $1.70
      10
      $1.61
      $16.10
      100
      $1.53
      $152.55
      500
      $1.44
      $720.40
      1000
      $1.36
      $1 356.00
      Start with
      Newest Products
      • M-SERIES D-Sub Connectors
        M-SERIES D-Sub Connectors
        The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
      • TLV493D-A1B6 3D Magnetic Sensor
        TLV493D-A1B6 3D Magnetic Sensor
        Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
      • Compare BSC047N08NS3 G
        Compare BSC047N08NS3 G
        BSC047N08NS3G vs BSC047N08NS3GATMA1 vs BSC047N08NS3GS
      • IR25750 Current Sensing IC
        IR25750 Current Sensing IC
        IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
      • 600 V Trench Ultra-Fast IGBTs
        600 V Trench Ultra-Fast IGBTs
        International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
      • DPS310 Digital Barometric Pressure Sensors
        DPS310 Digital Barometric Pressure Sensors
        Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
      More Newest Products
      Top