BSC047N08NS3 G

Mfr. #:: BSC047N08NS3 G
メーカー:: Infineon Technologies
説明:: MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
ライフサイクル:: メーカー新製品
データシート:: BSC047N08NS3 G データシート
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ECAD Model:

製品属性
属性値

メーカー: INF

製品カテゴリ: FET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: BSC047N08NS3GATMA1 BSC047N08NS3GXT SP000436372

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TDSON-8

テクノロジー: Si

チャネル数: 1 Channel

構成: シングルクワッドドレイントリプルソース

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 2.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 11 ns

立ち上がり時間: 17 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 18 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 80 V

Rds-On-Drain-Source-Resistance: 4.7 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 44 ns

典型的なターンオン遅延時間: 18 ns

チャネルモード: 強化

Tags: BSC047N08NS3G, BSC047N08NS3, BSC047, BSC04, BSC0, BSC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.2348
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.4186 500:$1.7121 100:$2.2013 10:$2.7390 1:$3.0300
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.4186 500:$1.7121 100:$2.2013 10:$2.7390 1:$3.0300
BSC047N08NS3G DISTI # BSC047N08NS3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) RoHS: Compliant Min Qty: 5000	Asia - 0
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.2439 10000:$1.1989 20000:$1.1549 30000:$1.1169 50000:$1.0969
BSC047N08NS3GATMA1. DISTI # 31AC8216	Infineon Technologies AG	Continuous Drain Current Id:18A,Drain Source Voltage Vds:80V,Automotive Qualification Standard:-	0	1:$1.4900 10000:$1.3900 30000:$1.2900
BSC047N08NS3 G DISTI # 60R2492	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	44	1:$2.5500 10:$2.1600 100:$1.7300 500:$1.5200 1000:$1.2600 2500:$1.1700 5000:$1.1300
BSC047N08NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	21	1000:$1.0400 500:$1.0900 100:$1.1400 25:$1.1900 1:$1.2800
BSC047N08NS3 G DISTI # 726-BSC047N08NS3G	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.5500 10:$2.1600 100:$1.7300 500:$1.5200 1000:$1.2600
BSC047N08NS3GATMA1 DISTI # 726-BSC047N08NS3GATM	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.5500 10:$2.1600 100:$1.7300 500:$1.5200 1000:$1.2600
BSC047N08NS3GATMA1 DISTI # 9064347P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 18A TDSON8 EP, RL	10	100:£1.1470 500:£1.0090 1000:£0.8320 2500:£0.7940
BSC047N08NS3G	Infineon Technologies AG	18 A, 80 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET	120	51:$1.1250 14:$1.5000 1:$2.2500
BSC047N08NS3GXT	Infineon Technologies AG	18 A, 80 V, 0.0047 OHM, N-CHANNEL, SI, POWER, MOSFET	176	102:$1.3365 39:$1.4850 1:$2.9700
BSC047N08NS3G	Infineon Technologies AG		96
BSC047N08NS3 G DISTI # 1775444	Infineon Technologies AG	MOSFET, N CH, 100A, 80V, PG-TDSON-8 RoHS: Compliant	44	1:$3.9200
BSC047N08NS3 G DISTI # 1775444	Infineon Technologies AG	MOSFET, N CH, 100A, 80V, PG-TDSON-8 RoHS: Compliant	44	1:£2.7800 10:£1.9600 100:£1.4700

関連製品

画像	モデル	説明
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	Mfr.#: BSC047N08NS3GATMA1 OMO.#: OMO-BSC047N08NS3GATMA1	MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC047N08NS OMO.#: OMO-BSC047N08NS-1190	ブランドニューオリジナル
	Mfr.#: BSC047N08NS3 OMO.#: OMO-BSC047N08NS3-1190	ブランドニューオリジナル
	Mfr.#: BSC047N08NS3 G OMO.#: OMO-BSC047N08NS3-G-1190	MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
	Mfr.#: BSC047N08NS3G OMO.#: OMO-BSC047N08NS3G-1190	Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
	Mfr.#: BSC047N08NS3GATMA1 OMO.#: OMO-BSC047N08NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 100A TDSON-8
	Mfr.#: BSC047N08NS3GS OMO.#: OMO-BSC047N08NS3GS-1190	ブランドニューオリジナル
	Mfr.#: BSC047N08NSG OMO.#: OMO-BSC047N08NSG-1190	ブランドニューオリジナル