RP1E100XNTR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

9.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

11 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Fall Time:

15 ns

Product Type:

MOSFET

Rise Time:

45 ns

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

RP1E100XN

Tags

RP1E100, RP1E10, RP1E1, RP1E, RP1