ATF-331M4-TR1

Product Attribute

Attribute Value

Manufacturer:

Broadcom Limited

Product Category:

RF JFET Transistors

RoHS:

Y

Transistor Type:

pHEMT

Technology:

GaAs

Gain:

15 dB

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

5.5 V

Vgs - Gate-Source Breakdown Voltage:

- 5 V

Id - Continuous Drain Current:

305 mA

Maximum Drain Gate Voltage:

- 5 V

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 160 C

Pd - Power Dissipation:

400 mW

Mounting Style:

SMD/SMT

Package / Case:

Mini PAK

Packaging:

Reel

Configuration:

Single Dual Source

Height:

0.7 mm

Length:

1.44 mm

Operating Frequency:

2 GHz

Product:

RF JFET

Type:

GaAs pHEMT

Width:

1.2 mm

Brand:

Broadcom / Avago

Forward Transconductance - Min:

440 mmho

NF - Noise Figure:

0.6 dB

P1dB - Compression Point:

19 dBm

Product Type:

RF JFET Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

ATF-331M4-T, ATF-331M, ATF-33, ATF-3, ATF