| PartNumber | ATF-33143-BLKG | ATF-33143-TR1G | ATF-33143-TR2G |
| Description | RF JFET Transistors Transistor GaAs Low Noise | RF JFET Transistors Transistor GaAs Low Noise | RF JFET Transistors Transistor GaAs Low Noise |
| Manufacturer | Broadcom Limited | Broadcom Limited | Broadcom / Avago |
| Product Category | RF JFET Transistors | RF JFET Transistors | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Transistor Type | pHEMT | pHEMT | pHEMT |
| Technology | GaAs | GaAs | GaAs |
| Gain | 15 dB | 15 dB | 15 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 5.5 V | 5.5 V | - |
| Vgs Gate Source Breakdown Voltage | - 5 V | - 5 V | - |
| Id Continuous Drain Current | 305 mA | 305 mA | - |
| Maximum Operating Temperature | + 160 C | + 160 C | + 160 C |
| Pd Power Dissipation | 600 mW | 600 mW | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-343 | SOT-343 | - |
| Packaging | Bulk | Reel | Reel |
| Configuration | Single Dual Source | Single Dual Source | Single Dual Source |
| Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
| Product | RF JFET | RF JFET | - |
| Type | GaAs pHEMT | GaAs pHEMT | - |
| Brand | Broadcom / Avago | Broadcom / Avago | - |
| Forward Transconductance Min | 440 mmho | 440 mmho | - |
| NF Noise Figure | 0.5 dB | 0.5 dB | - |
| P1dB Compression Point | 22 dBm | 22 dBm | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 100 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.016014 oz | - | - |
| Package Case | - | - | SOT-343 |
| Pd Power Dissipation | - | - | 600 mW |
| Id Continuous Drain Current | - | - | 305 mA |
| Vds Drain Source Breakdown Voltage | - | - | 5.5 V |
| Forward Transconductance Min | - | - | 440 mmho |
| Vgs Gate Source Breakdown Voltage | - | - | - 5 V |
| NF Noise Figure | - | - | 0.5 dB |
| P1dB Compression Point | - | - | 22 dBm |