IPB107N20N3GATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

88 A

Rds On - Drain-Source Resistance:

10.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

65 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

71 S

Fall Time:

11 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

41 ns

Typical Turn-On Delay Time:

18 ns

Part # Aliases:

G IPB107N20N3 IPB17N2N3GXT SP000676406

Unit Weight:

0.068654 oz

Tags

IPB107N20N3G, IPB107N20N3, IPB107N20N, IPB107, IPB10, IPB1, IPB