HGTP10N50E1D

HGTP10N50E1D
Mfr. #:
HGTP10N50E1D
メーカー:
Rochester Electronics, LLC
説明:
Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
ライフサイクル:
メーカー新製品
データシート:
HGTP10N50E1D データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
HGTP10N5, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
17.5A, 500V, N-CHANNEL IGBT
モデル メーカー 説明 ストック 価格
HGTP10N50E1DHarris SemiconductorInsulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
3800
  • 1000:$2.8700
  • 500:$3.0200
  • 100:$3.1400
  • 25:$3.2800
  • 1:$3.5300
画像 モデル 説明
HGTP10N120BN

Mfr.#: HGTP10N120BN

OMO.#: OMO-HGTP10N120BN-ON-SEMICONDUCTOR

IGBT 1200V 35A 298W TO220AB
HGTP10N120BN G10N120BN

Mfr.#: HGTP10N120BN G10N120BN

OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

ブランドニューオリジナル
HGTP10N120BN,10N120BN,

Mfr.#: HGTP10N120BN,10N120BN,

OMO.#: OMO-HGTP10N120BN-10N120BN--1190

ブランドニューオリジナル
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1

Mfr.#: HGTP10N40E1

OMO.#: OMO-HGTP10N40E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40F1D

Mfr.#: HGTP10N40F1D

OMO.#: OMO-HGTP10N40F1D-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50C1D

Mfr.#: HGTP10N50C1D

OMO.#: OMO-HGTP10N50C1D-1190

ブランドニューオリジナル
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP10N50E1D

Mfr.#: HGTP10N50E1D

OMO.#: OMO-HGTP10N50E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP10N50F1D

Mfr.#: HGTP10N50F1D

OMO.#: OMO-HGTP10N50F1D-1190

ブランドニューオリジナル
可用性
ストック:
Available
注文中:
3500
数量を入力してください:
HGTP10N50E1Dの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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